JPH0581072B2 - - Google Patents

Info

Publication number
JPH0581072B2
JPH0581072B2 JP62072174A JP7217487A JPH0581072B2 JP H0581072 B2 JPH0581072 B2 JP H0581072B2 JP 62072174 A JP62072174 A JP 62072174A JP 7217487 A JP7217487 A JP 7217487A JP H0581072 B2 JPH0581072 B2 JP H0581072B2
Authority
JP
Japan
Prior art keywords
region
film
control gate
insulating film
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62072174A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63237580A (ja
Inventor
Kunyoshi Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP62072174A priority Critical patent/JPS63237580A/ja
Priority to US07/172,495 priority patent/US4881108A/en
Publication of JPS63237580A publication Critical patent/JPS63237580A/ja
Publication of JPH0581072B2 publication Critical patent/JPH0581072B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
JP62072174A 1987-03-26 1987-03-26 半導体装置及びその製造方法 Granted JPS63237580A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62072174A JPS63237580A (ja) 1987-03-26 1987-03-26 半導体装置及びその製造方法
US07/172,495 US4881108A (en) 1987-03-26 1988-03-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62072174A JPS63237580A (ja) 1987-03-26 1987-03-26 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS63237580A JPS63237580A (ja) 1988-10-04
JPH0581072B2 true JPH0581072B2 (en]) 1993-11-11

Family

ID=13481597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62072174A Granted JPS63237580A (ja) 1987-03-26 1987-03-26 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US4881108A (en])
JP (1) JPS63237580A (en])

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6862251B2 (en) 2003-05-20 2005-03-01 Sharp Kabushiki Kaisha Semiconductor memory device
US6992933B2 (en) 2003-05-20 2006-01-31 Sharp Kabushiki Kaisha Programming verification method of nonvolatile memory cell, semiconductor memory device, and portable electronic apparatus having the semiconductor memory device
US6992926B2 (en) 2003-05-20 2006-01-31 Sharp Kabushiki Kaisha Driver circuit for semiconductor storage device and portable electronic apparatus
US7009884B2 (en) 2003-05-20 2006-03-07 Sharp Kabushiki Kaisha Semiconductor storage device, display device and portable electronic equipment
US7038282B2 (en) 2003-02-04 2006-05-02 Sharp Kabushiki Kaisha Semiconductor storage device
US7050337B2 (en) 2003-05-20 2006-05-23 Sharp Kabushiki Kaisha Writing control method and writing control system of semiconductor storage device, and portable electronic apparatus
US7053437B2 (en) 2003-05-20 2006-05-30 Sharp Kabushiki Kaisha Semiconductor memory device, semiconductor device and methods of manufacturing them, portable electronic equipment, and IC card
US7061808B2 (en) 2003-05-19 2006-06-13 Sharp Kabushiki Kaisha Semiconductor memory device, driving method thereof, and portable electronic apparatus
US7064982B2 (en) 2003-05-16 2006-06-20 Sharp Kabushiki Kaisha Semiconductor memory device and portable electronic apparatus
US7079421B2 (en) 2003-05-20 2006-07-18 Sharp Kabushiki Kaisha Method of improving data retention ability of semiconductor memory device, and semiconductor memory device
US7082057B2 (en) 2003-05-20 2006-07-25 Sharp Kabushiki Kaisha Semiconductor memory device
US7085166B2 (en) 2003-05-19 2006-08-01 Sharp Kabushiki Kaisha Semiconductor memory device and programming method thereof
US7092295B2 (en) 2003-05-19 2006-08-15 Sharp Kabushiki Kaisha Semiconductor memory device and portable electronic apparatus including the same
US7102941B2 (en) 2003-05-19 2006-09-05 Sharp Kabushiki Kaisha Semiconductor memory device and portable electronic apparatus
US7129539B2 (en) 2003-05-15 2006-10-31 Sharp Kabushiki Kaisha Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card
US7141849B2 (en) 2002-10-09 2006-11-28 Sharp Kabushiki Kaisha Semiconductor storage device having a function to convert changes of an electric charge amount to a current amount
US7167402B2 (en) 2003-05-20 2007-01-23 Sharp Kabushiki Kaisha Semiconductor storage device, redundancy circuit thereof, and portable electronic device
US7170791B2 (en) 2003-05-20 2007-01-30 Sharp Kabushiki Kaisha Programming verification method of nonvolatile memory cell, semiconductor memory device, and portable electronic apparatus having the semiconductor memory device
US7177188B2 (en) 2003-02-12 2007-02-13 Sharp Kabushiki Kaisha Semiconductor memory device, display device, and portable electronic apparatus
US7187594B2 (en) 2003-05-16 2007-03-06 Sharp Kabushiki Kaisha Semiconductor storage device, semiconductor device, manufacturing method of semiconductor storage device, and mobile electronic device
US7238984B2 (en) 2003-05-14 2007-07-03 Sharp Kabushiki Kaisha Semiconductor memory device, semiconductor device, and portable electronic apparatus
US7262458B2 (en) 2003-05-16 2007-08-28 Sharp Kabushiki Kaisha Semiconductor memory device and portable electronic apparatus
US7271799B2 (en) 2003-05-14 2007-09-18 Sharp Kabushiki Kaisha Display driver, display device, and portable electronic apparatus
US7304340B2 (en) 2003-05-20 2007-12-04 Sharp Kabushiki Kaisha Semiconductor storage elements, semiconductor device manufacturing methods therefor, portable electronic equipment and IC card
US7315060B2 (en) 2004-06-03 2008-01-01 Sharp Kabushiki Kaisha Semiconductor storage device, manufacturing method therefor and portable electronic equipment
US7315603B2 (en) 2003-05-20 2008-01-01 Sharp Kabushiki Kaisha Semiconductor storage device, method for protecting predetermined memory element and portable electronic equipment
US7405974B2 (en) 2003-05-20 2008-07-29 Sharp Kabushiki Kaisha Semiconductor memory device, page buffer resource assigning method and circuit therefor, computer system and mobile electronic device
US7544993B2 (en) 2002-12-27 2009-06-09 Sharp Kabushiki Kaisha Semiconductor storage device and portable electronic equipment

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266509A (en) * 1990-05-11 1993-11-30 North American Philips Corporation Fabrication method for a floating-gate field-effect transistor structure
EP0456319B1 (en) * 1990-05-11 1996-03-13 Koninklijke Philips Electronics N.V. Floating gate field effect transistor structure and method for manufacturing the same
JP3071541B2 (ja) * 1992-02-19 2000-07-31 ローム株式会社 不揮発性メモリ
JPH06338601A (ja) * 1993-05-31 1994-12-06 Toshiba Corp 半導体装置及びその製造方法
JP3973819B2 (ja) 1999-03-08 2007-09-12 株式会社東芝 半導体記憶装置およびその製造方法
US6320784B1 (en) * 2000-03-14 2001-11-20 Motorola, Inc. Memory cell and method for programming thereof
US7352024B2 (en) 2001-02-22 2008-04-01 Sharp Kabushiki Kaisha Semiconductor storage device and semiconductor integrated circuit
CN100483743C (zh) 2001-11-21 2009-04-29 夏普株式会社 半导体存储器件及其制造和操作方法及便携式电子装置
JP2003332474A (ja) * 2002-03-04 2003-11-21 Sharp Corp 半導体記憶装置
JP4370104B2 (ja) * 2002-03-05 2009-11-25 シャープ株式会社 半導体記憶装置
JP2004348806A (ja) 2003-03-26 2004-12-09 Sharp Corp 半導体記憶装置およびそれを備えた携帯電子機器
JP2004349308A (ja) * 2003-05-20 2004-12-09 Sharp Corp 半導体記憶装置
CN100382317C (zh) * 2003-12-19 2008-04-16 应用智慧有限公司 间隙壁捕获型存储器
US7375394B2 (en) * 2005-07-06 2008-05-20 Applied Intellectual Properties Co., Ltd. Fringing field induced localized charge trapping memory
KR100650903B1 (ko) * 2005-09-21 2006-11-27 동부일렉트로닉스 주식회사 비휘발성 기억 장치 및 그 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851568A (ja) * 1981-09-22 1983-03-26 Nec Corp 半導体装置
JPS6197866A (ja) * 1984-10-18 1986-05-16 Seiko Epson Corp Ｍｏｓ型半導体記憶装置
US4754320A (en) * 1985-02-25 1988-06-28 Kabushiki Kaisha Toshiba EEPROM with sidewall control gate

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7141849B2 (en) 2002-10-09 2006-11-28 Sharp Kabushiki Kaisha Semiconductor storage device having a function to convert changes of an electric charge amount to a current amount
US7544993B2 (en) 2002-12-27 2009-06-09 Sharp Kabushiki Kaisha Semiconductor storage device and portable electronic equipment
US7038282B2 (en) 2003-02-04 2006-05-02 Sharp Kabushiki Kaisha Semiconductor storage device
US7177188B2 (en) 2003-02-12 2007-02-13 Sharp Kabushiki Kaisha Semiconductor memory device, display device, and portable electronic apparatus
US7271799B2 (en) 2003-05-14 2007-09-18 Sharp Kabushiki Kaisha Display driver, display device, and portable electronic apparatus
US7238984B2 (en) 2003-05-14 2007-07-03 Sharp Kabushiki Kaisha Semiconductor memory device, semiconductor device, and portable electronic apparatus
US7129539B2 (en) 2003-05-15 2006-10-31 Sharp Kabushiki Kaisha Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card
US7312499B2 (en) 2003-05-15 2007-12-25 Sharp Kabushiki Kaisha Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card
US7262458B2 (en) 2003-05-16 2007-08-28 Sharp Kabushiki Kaisha Semiconductor memory device and portable electronic apparatus
US7187594B2 (en) 2003-05-16 2007-03-06 Sharp Kabushiki Kaisha Semiconductor storage device, semiconductor device, manufacturing method of semiconductor storage device, and mobile electronic device
US7064982B2 (en) 2003-05-16 2006-06-20 Sharp Kabushiki Kaisha Semiconductor memory device and portable electronic apparatus
US7061808B2 (en) 2003-05-19 2006-06-13 Sharp Kabushiki Kaisha Semiconductor memory device, driving method thereof, and portable electronic apparatus
US7092295B2 (en) 2003-05-19 2006-08-15 Sharp Kabushiki Kaisha Semiconductor memory device and portable electronic apparatus including the same
US7102941B2 (en) 2003-05-19 2006-09-05 Sharp Kabushiki Kaisha Semiconductor memory device and portable electronic apparatus
US7085166B2 (en) 2003-05-19 2006-08-01 Sharp Kabushiki Kaisha Semiconductor memory device and programming method thereof
US7079421B2 (en) 2003-05-20 2006-07-18 Sharp Kabushiki Kaisha Method of improving data retention ability of semiconductor memory device, and semiconductor memory device
US7009884B2 (en) 2003-05-20 2006-03-07 Sharp Kabushiki Kaisha Semiconductor storage device, display device and portable electronic equipment
US7170791B2 (en) 2003-05-20 2007-01-30 Sharp Kabushiki Kaisha Programming verification method of nonvolatile memory cell, semiconductor memory device, and portable electronic apparatus having the semiconductor memory device
US7053437B2 (en) 2003-05-20 2006-05-30 Sharp Kabushiki Kaisha Semiconductor memory device, semiconductor device and methods of manufacturing them, portable electronic equipment, and IC card
US7082057B2 (en) 2003-05-20 2006-07-25 Sharp Kabushiki Kaisha Semiconductor memory device
US7050337B2 (en) 2003-05-20 2006-05-23 Sharp Kabushiki Kaisha Writing control method and writing control system of semiconductor storage device, and portable electronic apparatus
US6862251B2 (en) 2003-05-20 2005-03-01 Sharp Kabushiki Kaisha Semiconductor memory device
US7167402B2 (en) 2003-05-20 2007-01-23 Sharp Kabushiki Kaisha Semiconductor storage device, redundancy circuit thereof, and portable electronic device
US7304340B2 (en) 2003-05-20 2007-12-04 Sharp Kabushiki Kaisha Semiconductor storage elements, semiconductor device manufacturing methods therefor, portable electronic equipment and IC card
US6992926B2 (en) 2003-05-20 2006-01-31 Sharp Kabushiki Kaisha Driver circuit for semiconductor storage device and portable electronic apparatus
US6992933B2 (en) 2003-05-20 2006-01-31 Sharp Kabushiki Kaisha Programming verification method of nonvolatile memory cell, semiconductor memory device, and portable electronic apparatus having the semiconductor memory device
US7315603B2 (en) 2003-05-20 2008-01-01 Sharp Kabushiki Kaisha Semiconductor storage device, method for protecting predetermined memory element and portable electronic equipment
US7405974B2 (en) 2003-05-20 2008-07-29 Sharp Kabushiki Kaisha Semiconductor memory device, page buffer resource assigning method and circuit therefor, computer system and mobile electronic device
US7315060B2 (en) 2004-06-03 2008-01-01 Sharp Kabushiki Kaisha Semiconductor storage device, manufacturing method therefor and portable electronic equipment

Also Published As

Publication number Publication date
US4881108A (en) 1989-11-14
JPS63237580A (ja) 1988-10-04

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees